Surface electrical degradation of helium implanted SiO2

by Gonzalez, S. M., Morono, A. and Hodgson, E. R.
Reference:
Surface electrical degradation of helium implanted SiO2 (Gonzalez, S. M., Morono, A. and Hodgson, E. R.), In JOURNAL OF NUCLEAR MATERIALS, volume 367, 2007.
Bibtex Entry:
@article{nr485,
	Author = {Gonzalez, S. M. and Morono, A. and Hodgson, E. R.},
	CL = {Santa Barbara, CA},
	CT = {12th International Conference on Fusion Reactor Materials (ICFRM-12)},
	CY = {DEC 07-12, 2005},
	Date = {AUG 1 2007},
	Date-Added = {2013-10-12 14:28:31 +0000},
	Date-Modified = {2013-10-12 14:28:31 +0000},
	Doi = {10.1016/j.jnucmat.2007.03.172},
	Isi = {WOS:000249083500021},
	Issn = {0022-3115},
	Journal = {JOURNAL OF NUCLEAR MATERIALS},
	Month = {Aug},
	Pages = {1014--1017},
	Part-Number = {B},
	Publication-Type = {J},
	Times-Cited = {9},
	Title = {Surface electrical degradation of helium implanted SiO2},
	Volume = {367},
	Year = {2007},
	Z8 = {0},
	Z9 = {9},
	ZB = {0},
	ZS = {0},
	Bdsk-Url-1 = {http://dx.doi.org/10.1016/j.jnucmat.2007.03.172}}