Surface electrical degradation for low mass ion implanted SiO2: Dependence on ion mass, energy and dose rate

by de Vicente, S. M. Gonzalez, Morono, A. and Hodgson, E. R.
Reference:
Surface electrical degradation for low mass ion implanted SiO2: Dependence on ion mass, energy and dose rate (de Vicente, S. M. Gonzalez, Morono, A. and Hodgson, E. R.), In FUSION ENGINEERING AND DESIGN, volume 82, 2007.
Bibtex Entry:
@article{nr463,
	Author = {de Vicente, S. M. Gonzalez and Morono, A. and Hodgson, E. R.},
	CL = {Warsaw, POLAND},
	CT = {24th Symposium on Fusion Technology (SOFT-24)},
	CY = {SEP 11-15, 2006},
	Date = {OCT 2007},
	Date-Added = {2013-10-12 14:28:31 +0000},
	Date-Modified = {2013-10-12 14:28:31 +0000},
	Doi = {10.1016/j.fusengdes.2007.02.020},
	Isi = {WOS:000250980100140},
	Issn = {0920-3796},
	Journal = {FUSION ENGINEERING AND DESIGN},
	Month = {Oct},
	Number = {15-24},
	Pages = {2567--2571},
	Publication-Type = {J},
	Times-Cited = {5},
	Title = {Surface electrical degradation for low mass ion implanted SiO2: Dependence on ion mass, energy and dose rate},
	Volume = {82},
	Year = {2007},
	Z8 = {0},
	Z9 = {5},
	ZB = {0},
	ZS = {0},
	Bdsk-Url-1 = {http://dx.doi.org/10.1016/j.fusengdes.2007.02.020}}